Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photoemission measurements
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چکیده
منابع مشابه
Gallium self-diffusion in gallium phosphide
Ga self-diffusion in gallium phosphide ~GaP! is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy ~SIMS! is used to monitor intermixing of Ga and Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy ~MBE! on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D52.0 cm s exp(24.5 eV/...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.4997800